tsdp341.., TSDP343.. www.vishay.com vishay semiconductors rev. 1.1, 22-aug-14 1 document number: 82667 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ir receiver modules for data transmission mechanical data pinning for tsdp341.., TSDP343..: 1 = out, 2 = gnd, 3 = v s features ? very low supply current ? continuous data rates up to 7777 bps ? range up to 32 m ? photo detector and preamplifier in one package ? internal filter tuned to 38.4 khz for 4800 bps or 57.6 khz for 9600 bps ? shielding against emi ? supply voltage: 2.5 v to 5.5 v ? immunity against ambient light ? insensitive to supply voltage ripple and noise ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description these products are miniaturized receivers for low speed infrared data transmission. a pin diode and a preamplifier are assembled on a lead frame, the epoxy package contains an ir filter. the demodulated output can be directly connected to a uart or a microprocessor. the tsdp34138 may be used for continuous reception of data according to rs-232 at 4800 bps in noise free environments. higher data rate rs-232 may require data moni toring of gain levels. non rs-232 codings may be used to achieve continuous average data rates up to 7800 bps in noisy ambients. this component has not been qualified according to automotive specifications. block diagram application circuit 16672 1 2 3 parts table agc agc1 for low noise environments agc3 for noisy environments carrier frequency 38.4 khz tsdp34138 TSDP34338 57.6 khz tsdp34156 TSDP34356 package mold pinning 1 = out, 2 = gnd, 3 = v s 1 = out, 2 = gnd, 3 = v s dimensions (mm) 6.0 w x 6.95 h x 5.6 d mounting leaded application data transmission 30 k 2 3 1 demo- pass agc input pin band dulator control circuit 16833-13 c 1 ir receiver gnd circuit c r 1 + v s gnd transmitter with tsalxxxx v s v o 17170_5 out r 1 and c 1 are recommended for protection against eos. components should be in the range of 33 < r 1 < 1 k , c 1 > 0.1 f.
tsdp341.., TSDP343.. www.vishay.com vishay semiconductors rev. 1.1, 22-aug-14 2 document number: 82667 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress ratin g only and functional operation of the device at these or any other cond itions beyond those indicated in the operational sections of t his specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect the device reliability. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - output active low fig. 2 - pulse length and sensitivity in dark ambient absolute maximum ratings parameter test condition symbol value unit supply voltage v s -0.3 to +6 v supply current i s 3ma output voltage v o -0.3 to (v s + 0.3) v output current i o 5ma junction temperature t j 100 c storage temperature range t stg -25 to +85 c operating temperature range t amb -25 to +85 c power consumption t amb 85 c p tot 10 mw soldering temperature t 10 s, 1 mm from case t sd 260 c electrical and optical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit supply current e v = 0, v s = 3.3 v i sd 0.27 0.35 0.45 ma e v = 40 klx, sunlight i sh 0.45 ma supply voltage v s 2.5 5.5 v transmission distance e v = 0, test signal see fig. 1, ir diode tsal6200, i f = 150 ma d35m output voltage low i osl = 0.5 ma, e e = 0.7 mw/m 2 , test signal see fig. 1 v osl 100 mv minimum irradiance pulse width tolerance: t pi - 1/f 0 < t po < t pi + 4/f 0 , test signal see fig. 1 e e min. 0.15 0.30 mw/m 2 maximum irradiance t pi - 1/f 0 < t po < t pi + 4/f 0 , test signal see fig. 1 e e max. 30 w/m 2 maximum pulse width e e min. > 10 mw/m 2 , t pi = 8/f 0 t po max. 11.5/f 0 s directivity angle of half transmission distance ? 1/2 45 deg e e t t pi *) t v o v oh v ol t po 2) t optical test s i g nal (ir diode t s al6200, i f = 0.4 a, n = 6 pul s e s , f = f 0 , t = 10 m s ) output s i g nal t d 1) 1) 3/f 0 < t d < 9/f 0 2) t pi - 1/f 0 < t po < t pi + 4/f 0 *) t pi 6/f 0 i s recommended for optimal function 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.1 10 1000 100 000 t po -output pul s e width (m s ) e e - irradiance (mw/m 2 ) output pul s e width input bur s t length optical te s t s ignal, = 940 nm, f = 38 khz, n = 8 carrier cycle s
tsdp341.., TSDP343.. www.vishay.com vishay semiconductors rev. 1.1, 22-aug-14 3 document number: 82667 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - output function fig. 4 - output pulse diagram fig. 5 - frequency depe ndence of responsivity fig. 6 - sensitivity in bright ambient fig. 7 - sensitivity vs. supply voltage disturbances fig. 8 - maximum envelope duty cycle vs. burst length e e t v o v oh v ol t 210 s 210 s t = 60 ms t on t off optical t est signal output signal , (see fig. 4) 0 0.1 0.2 0.3 0.4 0.1 10 1000 100 000 t on , t off -output pul s e width (m s ) e e - irradiance (mw/m 2 ) t on t off = 940 nm, f = 38 khz 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.7 0.9 1.1 1.3 f/f 0 - relative frequency 16926 f (3 db) = f 0 /7 e e min. /e e - rel. responsivity f = f 0 5 % 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.01 0.1 1 10 100 e e min. -thre s hold irradiance (mw/m 2 ) e e - ambient dc irradiance (w/m 2 ) wavelength of ambient illumination: = 950 nm correlation with ambient light s ource s : 10 w/m 2 = 1.4 klx ( s td. ilum. a, t = 2855 k) 10 w/m 2 = 8.2 klx (daylight, t = 5900 k) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1 10 100 1000 e e min. -thre s hold irradiance (mw/m 2 ) v s rm s - ac voltage on dc s upply voltage (mv) f = f 0 f = 30 khz f = 10 khz f = 100 hz 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 burst length (number of cycles/burst) max. envelope duty cycle f = 38 khz, e e = 2 mw/m2 TSDP343.. tsdp341..
tsdp341.., TSDP343.. www.vishay.com vishay semiconductors rev. 1.1, 22-aug-14 4 document number: 82667 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - sensitivity vs. ambient temperature fig. 10 - relative spectral sensitivity vs. wavelength fig. 11 - horizontal directivity fig. 12 - sensitivity vs. supply voltage 0 0.05 0.10 0.15 0.20 0.25 0.30 -30 -10 10 30 50 70 90 e e min. -thre s hold irradiance (mw/m 2 ) t amb - ambient temperature ( c) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 750 800 850 900 950 1000 1050 1100 1150 21425 - wavelength (nm) s ( ) rel - relative spectral sensitivity 96 12223p2 0.4 0.2 0 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 d rel - relative transmission distance 0 0.05 0.10 0.15 0.20 0.25 0.30 123456 e e min. - s en s itivity (mw/m 2 ) v s - s upply voltage (v)
tsdp341.., TSDP343.. www.vishay.com vishay semiconductors rev. 1.1, 22-aug-14 5 document number: 82667 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 suitable data format theses receivers are designed to suppress spurious output pulses due to noise or optica l disturbances. the devices can distinguish data signals from noise due to differences in frequency, burst length, and envelope duty cycle. for optimum sensitivity, the da tas modulation frequency should be close to the devices band-pass center frequency (e.g. 38.4 khz) and fulfill the conditions in the table below. when a data signal is applied to the receiver in the presence of noise, the sensitivity of the receiver is automatically reduced by the agc to insure that no spurious pulses are present at the receivers output. some examples of noise which is suppressed: ? dc light (e.g. from tungsten bulbs sunlight) ? continuous signals at any frequency ? strongly or weakly modulate d patterns from fluorescent lamps with electronic ballasts (see fig. 13 or fig. 14). fig. 13 - ir disturban ce from fluorescent lamp with low modulation fig. 14 - ir disturban ce from fluorescent lamp with high modulation 0101520 time (ms) 16920 ir signal 5 0101520 time (ms) 16921 ir signal 5 tsdp341.. TSDP343.. minimum burst length 6 cy cles/burst 6 cycles/burst after each burst of length a gap time is required of 6 to 70 cycles 7 cycles 6 to 35 cycles 7 cycles for bursts greater than a minimum gap time in the data stream is needed of 70 cycles > 1.2 x burst length 35 cycles > 6 x burst length maximum number of continuous short bursts/second 3000 3000 suppression of interference from fluorescent lamps mildly modulated noise patterns are suppressed (fig. 13) strongly modulated noise patterns are suppressed (fig. 14)
tsdp341.., TSDP343.. www.vishay.com vishay semiconductors rev. 1.1, 22-aug-14 6 document number: 82667 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters not indicated tolerance s 0.2 drawing-no.: 6.550-5169.01-4 i ss ue: 9; 03.11.10 13655 s pecification s according to din technical drawing s 3.9 0.5 max. 1.3 4.1 6 0.85 max. 0.89 1 1 8.25 (5.55) 6.95 5.3 30.5 0.5 2.54 nom. 2.54 nom. 0.7 max. 5.6 marking area r 2.5
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